| PART |
Description |
Maker |
| UL1402P UL1401P UL1403P UL1403 UL1402 |
Wzmacniacz mocy m.cz.
From old datasheet system
OBUDOWA CE 74
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
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List of Unclassifed Manufacturers
UNITRA CEMI
Ultra CEMI
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| SLX24C0816 SLE24C01-S |
8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
|
Siemens Semiconductor Group
|
| UL1201 |
Wzmacniacz p.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米（256亩8 / 128亩16）位闪存米（256亩8 / 128亩16）位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
| PSD835G2V_07 PSD835G2V PSD835G2V-120U PSD835G2V-12 |
Flash PSD, 3 V supply, for 8-bit MCUs 4 Mbit 256 Kbit dual Flash memories and 64 Kbit SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| PSD835G2_04 PSD835G2 PSD835G2-70UIT PSD835G2-70UT |
Flash PSD, 5V Supply, for 8-bit MCUs 4 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| S29PL256N65FAWW02 S29PL129N65FAWW00 S29PL256N65FAW |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION[SPANSION]
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| M93C86-DS3TP/W M93C46-DS3TP/W M93C46-BN3G/W M93C46 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM 16千位千位千位千位千位位或16位宽）MICROWIRE的㈢串行访问的EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM 16千位千位千位千位1千位位或16位宽）MICROWIRE的㈢串行访问的EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM 16千位千位4千位千位千位位或16位宽）MICROWIRE的㈢串行访问的EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM 16千位8千位千位千位千位8位或16位宽）MICROWIRE的㈢串行访问的EEPROM
|
意法半导
STMicroelectronics N.V.
|
| AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位）3.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
|
Advanced Micro Devices, Inc.
|
